2SB1254

JMnic Product Specification Silicon PNP Power Transistors 2SB1254 DESCRIPTION ・With TO-3PFa package ・Optimum for 60W HiFi output ・High foward current transfer ratio ・Low collector saturation voltage ・Complement to type 2SD1894 APPLICATIONS ・Power amplification PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 3 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -160 -140 -5 -7 -12 70 W UNIT V V V A A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO VCEsat VBEsat ICBO ICEO IEBO hFE-1 hFE -2 fT PARAMETER Collector-emitter voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-30mA ; IB=0 IC=-6A ;IB=-6mA IC=-6A ;IB=-6mA VCB=-160V; IE=0 VCE=-140V; IB=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-6A ; VCE=-5V IC=-0.5A ; VCE=-10V;f=1MHz 2000 5000 20 MIN -140 TYP. 2SB1254 MAX UNIT V -2.5 -3.0 -100 -100 -100 V V μA μA μA 30000 MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=-6A; VCC=50V IB1=-IB2=-6mA 1.0 1.5 1.2 μs μs μs 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1254 Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3