2SB1455

JMnic Product Specification Silicon PNP Power Transistors 2SB1455 DESCRIPTION ・With TO-220F package ・Complement to type 2SD2203 ・Low collector saturation voltage: ・Large current capacity APPLICATIONS ・High current power switching applications PINNING PIN 1 2 3 Emitter Collector Base Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 30 150 -55~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE -90 -80 -6 -7 -12 2.0 W UNIT V V V A A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-1mA ;RBE=∞ IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-4A ;IB=-0.4A VCB=-80V; IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-4A ; VCE=-2V IC=-1A ; VCE=-5V 70 30 MIN -80 -90 -6 2SB1455 TYP. MAX UNIT V V V -0.5 -0.1 -0.1 280 V mA mA 20 MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=-2.0A IB1=-IB2=-0.2A VCC=-50V ,RL=25Ω 0.2 0.7 0.2 μs μs μs hFE-1 Classifications Q 70-140 R 100-200 S 140-280 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1455 Fig.2 Outline dimensions 3 JMnic Product Specification Silicon PNP Power Transistors 2SB1455 4