2SB1548

JMnic Product Specification Silicon PNP Power Transistors 2SB1548 2SB1548A DESCRIPTION ・With TO-220F package ・Complement to type 2SD2374/2374A ・Low collector saturation voltage ・High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS ・For power amplifications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER 2SB1548 VCBO Collector-base voltage 2SB1548A 2SB1548 VCEO Collector-emitter voltage 2SB1548A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 25 150 -55~150 ℃ ℃ Open collector Open base -80 -5 -3 -5 2 W V A A Open emitter -80 -60 V CONDITIONS VALUE -60 V UNIT JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SB1548 IC=-30mA ; IB=0 2SB1548A IC=-3A ;IB=-0.375A IC=-3A ; VCE=-4V 2SB1548 2SB1548A 2SB1548 2SB1548A VCB=-60V; IE=0 CONDITIONS 2SB1548 2SB1548A MIN -60 TYP. MAX UNIT VCEO Collector-emitter voltage V -80 -1.2 -1.8 V V VCEsat VBE Collector-emitter saturation voltage Base-emitter voltage ICBO Collector cut-off current -200 VCB=-80V; IE=0 VCE=-30V; IB=0 -300 VCE=-60V; IB=0 VEB=-5V; IC=0 IC=-1A ; VCE=-4V IC=-3A ; VCE=-4V IC=-0.5A ; VCE=-10V 70 10 30 -1 250 μA ICEO Collector cut-off current μA IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency mA MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=-1.0A IB1=-IB2=-0.1A 0.5 1.2 0.3 μs μs μs hFE-1 Classifications Q 70-150 P 120-250 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1548 2SB1548A Fig.2 Outline dimensions 3 JMnic Product Specification Silicon PNP Power Transistors 2SB1548 2SB1548A 4