2SB1558

JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1558 DESCRIPTION ・With TO-3PI package ・Complement to type 2SD2387 APPLICATIONS ・For power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PI) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -140 -140 -5 -8 -0.1 80 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification Silicon PNP Darlington Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 Cob fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-50mA ;IB=0 IC=-7A ;IB=-7mA IC=-7A ; VCE=-5V VCB=-140V; IE=0 VEB=-5V; IC=0 IC=-7A ; VCE=-5V IC=-12A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-1A ; VCE=-5V 5000 2000 170 30 MIN -140 TYP. 2SB1558 MAX UNIT V -2.5 -3.0 -5 -5 30000 V V μA μA pF MHz hFE-1 Classifications A 5000-12000 B 9000-18000 C 15000-30000 2 JMnic Product Specification Silicon PNP Darlington Power Transistors PACKAGE OUTLINE 2SB1558 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3