2SB1565

JMnic Product Specification Silicon PNP Power Transistors 2SB1565 DESCRIPTION ・With TO-220F package ・Excellent DC current gain characteristics ・Low collector saturation voltage ・Wide SOA (safe operating area) ・Complement to type 2SD2394 PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 25 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector MAX -80 -60 -7 -3 -6 2 W UNIT V V V A A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE COB fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-1mA ;IB=0 IC=-50μA ;IE=0 IE=-50μA ;IC=0 IC=-2A ;IB=-0.2A IC=-2A ;IB=-0.2A VCB=-60V; IE=0 VEB=-7V; IC=0 IC=-0.5A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-5V 100 MIN -60 -80 -7 2SB1565 TYP. MAX UNIT V V V -1.5 -1.5 -10 -10 320 50 15 V V μA μA pF MHz hFE Classifications E 100-200 F 160-320 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1565 Fig.2 Outline dimensions 3