2SB1640

JMnic Product Specification Silicon PNP Power Transistors 2SB1640 DESCRIPTION ・With ITO-220 package ・Low collector saturation voltage ・Complement to type 2SD2525 APPLICATIONS ・Audio frequency power amplifier PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -60 -60 -7 -3 -0.5 1.8 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification Silicon PNP Power Transistors 2SB1640 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA ;IB=0 IC=-2A; IB=-0.2A IC=-0.5A ; VCE=-5V VCB=-60V ;IE=0 VEB=-7V ;IC=0 IC=-0.5A ; VCE=-5V IC=-2A ; VCE=-5V IC=-0.5A ; VCE=-5V IE=0; VCB=-10V;f=1MHz 100 15 9 50 MHz pF MIN -60 -1.0 -0.75 -1.5 -1.0 -10 -10 320 TYP. MAX UNIT V V V μA μA 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1640 Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3