2SB1642

JMnic Product Specification Silicon PNP Power Transistors 2SB1642 DESCRIPTION ・With TO-220F package ・Low collector saturation voltage: VCE(SAT)=-1.5V(Max) at IC=-2.5A,IB=-0.25A ・Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS ・Audio frequency power amplifier applications PINNING PIN 1 2 3 Emitter Collector Fig.1 simplified outline (TO-220F) and symbol Base DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 25 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -60 -60 -7 -4 -1 2.0 W UNIT V V V A A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SB1642 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -60 V VCEsat Collector-emitter saturation voltage IC=-2.5A; IB=-0.25A -0.7 -1.5 V VBE Base-emitter voltage IC=-0.5A;VCE=-5V -0.75 -1.0 V μA μA ICBO Collector cut-off current VCB=-60V; IE=0 -10 IEBO Emitter cut-off current VEB=-7V; IC=0 -10 hFE-1 DC current gain IC=-0.5A ; VCE=-5V 100 320 hFE-2 DC current gain IC=-3A ; VCE=-5V 20 fT Transition frequency IC=-0.5A ; VCE=-5V 9.0 MHz COB Collector output capacitance IE=0; f=1MHz;VCB=-10V 50 pF 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1642 Fig.2 Outline dimensions 3 JMnic Product Specification Silicon PNP Power Transistors 2SB1642 4