2SB1642

2SB1642

  • 厂商:

    JMNIC

  • 封装:

  • 描述:

    2SB1642 - Silicon PNP Power Transistors - Quanzhou Jinmei Electronic Co.,Ltd.

  • 详情介绍
  • 数据手册
  • 价格&库存
2SB1642 数据手册
JMnic Product Specification Silicon PNP Power Transistors 2SB1642 DESCRIPTION ・With TO-220F package ・Low collector saturation voltage: VCE(SAT)=-1.5V(Max) at IC=-2.5A,IB=-0.25A ・Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS ・Audio frequency power amplifier applications PINNING PIN 1 2 3 Emitter Collector Fig.1 simplified outline (TO-220F) and symbol Base DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 25 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -60 -60 -7 -4 -1 2.0 W UNIT V V V A A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SB1642 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -60 V VCEsat Collector-emitter saturation voltage IC=-2.5A; IB=-0.25A -0.7 -1.5 V VBE Base-emitter voltage IC=-0.5A;VCE=-5V -0.75 -1.0 V μA μA ICBO Collector cut-off current VCB=-60V; IE=0 -10 IEBO Emitter cut-off current VEB=-7V; IC=0 -10 hFE-1 DC current gain IC=-0.5A ; VCE=-5V 100 320 hFE-2 DC current gain IC=-3A ; VCE=-5V 20 fT Transition frequency IC=-0.5A ; VCE=-5V 9.0 MHz COB Collector output capacitance IE=0; f=1MHz;VCB=-10V 50 pF 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1642 Fig.2 Outline dimensions 3 JMnic Product Specification Silicon PNP Power Transistors 2SB1642 4
2SB1642
物料型号: - 型号为2SB1642。

器件简介: - 2SB1642是一款硅PNP功率晶体管,采用TO-220F封装,具有低集电极饱和电压和集电极功耗。

引脚分配: - PIN 1: 发射极(Emitter) - PIN 2: 集电极(Collector) - PIN 3: 基极(Base)

参数特性: - 绝对最大额定值: - VCBO:-60V - VCEO:-60V - VEBO:-7V - Ic:-4A - Ib:-1A - Pc:2.0W(Ta=25°C时)/ 25W(Tc=25°C时) - Tj:150°C - Tstg:-55~150°C

功能详解: - 该晶体管适用于音频频率功率放大应用。 - 具有低集电极饱和电压VCE(SAT)=-1.5V(最大值)在Ic=-2.5A,Ib=-0.25A时。 - 集电极功耗Pc=25W(Tc=25°C)。

应用信息: - 音频频率功率放大应用。

封装信息: - 封装类型为TO-220F,具体尺寸见PDF中的图2。
2SB1642 价格&库存

很抱歉,暂时无法提供与“2SB1642”相匹配的价格&库存,您可以联系我们找货

免费人工找货