2SB509

JMnic Product Specification Silicon PNP Power Transistors 2SB509 DESCRIPTION ・With TO-66 package ・Complement to type 2SD315 APPLICATIONS ・For use in audio frequency power amplifier application PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -60 -60 -5 -4 -10 35 150 -40~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB509 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -60 V VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A -1.0 V VBE Base-emitter on voltage IC=-1A ; VCE=-2V -1.5 V ICBO Collector cut-off current VCB=-20V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-4V; IC=0 -1.0 mA hFE-1 DC current gain IC=-1A ; VCE=-2V 40 320 hFE-2 DC current gain IC=-0.1A ; VCE=-2V 40 fT Transition frequency IC=-0.5A ; VCE=-5V 8 MHz hFE-1 Classifications C 40-80 D 60-120 E 100-200 F 160-320 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB509 Fig.2 outline dimensions 3