2SB511

JMnic Product Specification Silicon PNP Power Transistors 2SB511 DESCRIPTION ・With TO-220C package ・Complement to type 2SD325 ・Low collector saturation voltage APPLICATIONS ・Designed for use in low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current -peak Ta=25℃ PC Collector dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 10 150 -50~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE -35 -35 -5 -1.5 -3.0 1.75 W UNIT V V V A A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB511 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 -35 V VCEsat Collector-emitter saturation voltage IC=-1.5A; IB=-0.15A -1.0 V VBE Base-emitter on voltage IC=-1A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-20V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE-1 DC current gain IC=-1A ; VCE=-2V 40 320 hFE-2 DC current gain IC=-0.1A ; VCE=-2V 35 fT Transition frequency IC=-0.5A ; VCE=-5V 8 MHz hFE-1 Classifications C 40-80 D 60-120 E 100-200 F 160-320 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB511 Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3