2SB548

JMnic Product Specification Silicon PNP Power Transistors 2SB548 DESCRIPTION ・With TO-126 package ・Complement to type 2SD414 APPLICATIONS ・Designed for use in driver and output stages of audio frequency amplifiers PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Ta=25℃ PD Total power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 10 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -100 -80 -5 -0.8 1.0 W UNIT V V V A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE COB fT PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-10mA ;IB=0 IE=-50μA ;IC=0 IC=-0.5A ;IB=-50mA IC=-0.5A ;IB=-50mA VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-0.2A ; VCE=-5V IE=0; VCB=-10V;f=1MHz IC=-0.1A ; VCE=-5V 40 25 70 MIN -80 -5 TYP. 2SB548 MAX UNIT V V -2.0 -1.5 -1.0 -1.0 320 V V μA μA pF MHz 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB548 Fig.2 Outline dimensions 3