2SB552

JMnic Product Specification Silicon PNP Power Transistors 2SB552 DESCRIPTION ・With TO-3 package ・Complement to type 2SD552 APPLICATIONS ・Power amplifier applications ・Power switching applications ・DC-DC converters PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -220 -180 -5 -15 -4 150 150 -55~200 UNIT V V V A A W ℃ ℃ JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SB552 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 -180 V VCEsat Collector-emitter saturation voltage IC=-10A; IB=-1A -2.0 V VBEsat Base-emitter saturation voltage IC=-10A; IB=-1A -2.5 V ICBO Collector cut-off current VCB=-220V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE DC current gain IC=-5A ; VCE=-5V 25 80 COB Output capacitance IE=0 ; VCB=-10V;f=1.0MHz 300 pF fT Transition frequency IC=-1A ; VCE=-10V 3.5 MHz 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB552 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3