JMnic
Product Specification
Silicon PNP Power Transistors
2SB557
DESCRIPTION ・With TO-3 package ・Complement to type 2SD427 ・High power dissipation APPLICATIONS ・Power amplifier applications ・Recommended for 50W high-fidelity audio frequency amplifier output stage
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta=℃)
SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -5 -8 8 80 150 -65~150 UNIT V V V A A W ℃ ℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SB557
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-0.1A ;IB=0
-120
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-10mA ;IC=0
-5
V
VCEsat
Collector-emitter saturation voltage
IC=-5A; IB=-0.5A
-2.5
V
VBE
Base-emitter on voltage
IC=-5A ; VCE=-5V
-2.0
V
ICBO
Collector cut-off current
VCB=-60V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-0.1
mA
hFE-1
DC current gain
IC=-1A ; VCE=-5V
40
140
hFE-2
DC current gain
IC=-5A ; VCE=-5V
20
COB
Output capacitance
IE=0 ; VCB=-10V;f=1.0MHz
280
pF
fT
Transition frequency
IC=-1A ; VCE=-5V
7
MHz
hFE-1 Classifications R 40-80 O 70-140
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB557
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
很抱歉,暂时无法提供与“2SB557”相匹配的价格&库存,您可以联系我们找货
免费人工找货