2SB601

JMnic Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC current gain ・Low collector saturation voltage APPLICATIONS ・For low-frequency power amplifier and low-speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SB601 Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector current-Pulse Base current-DC TC=25℃ PT Total power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 1.5 150 -55~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE -100 -100 -7 -5 -8 -0.5 30 W UNIT V V V A A A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEX IEBO hFE-1 hFE-2 Cob PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance CONDITIONS IC=-3A, IB1=-3mA,L=1mH IC=-3A ,IB=-3mA IC=-3A ,IB=-3mA VCB=-100V, IE=0 VCE=-100V, VBE=-1.5V Ta=25℃ VEB=-5V; IC=0 IC=-3A ; VCE=-2V IC=-5A ; VCE=-2V IE=0 ; VCB=-10V,f=0.1MHz 2000 500 MIN -100 TYP. 2SB601 MAX UNIT V -1.5 -2.0 -10 -10 -1.0 -3.0 15000 V V μA μA mA mA 300 pF Switching times ton tstg tf Turn-on time Storage time Fall time IC=-3A; IB1=-IB2=-3mA VCC=-50V;RL=17Ω 0.5 1.0 1.0 μs μs μs hFE-1Classifications M 2000-5000 L 3000-7000 K 5000-15000 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB601 Fig.2 Outline dimensions 3