2SB631K

JMnic Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION ・With TO-126 package ・Complement to type 2SD600/K ・High breakdown voltage VCEO:-100/-120V ・High current: -1A ・Low saturation voltage,excellent hFE linearity APPLICATIONS ・For low-frequency power amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SB631 VCBO Collector-base voltage 2SB631K 2SB631 VCEO Collector-emitter voltage 2SB631K VEBO IC ICM Emitter-base voltage Collector current (DC) Collector current-Peak Ta=25℃ PD Total power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 8 150 -55~150 ℃ ℃ Open collector Open base -120 -5 -1 -2 1 W V A A Open emitter -120 -100 V CONDITIONS VALUE -100 V UNIT JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SB631 IC=-1mA; RBE=∞ 2SB631K 2SB631 IC=-10μA ;IE=0 2SB631K IE=-10μA ;IC=0 IC=-0.5A ;IB=-50mA IC=-0.5A ;IB=-50mA VCB=-50V; IE=0 VEB=-4V; IC=0 IC=-50mA ; VCE=-5V IC=-0.5A ; VCE=-5V IC=-50mA ; VCE=-10V f=1MHz ; VCB=-10V CONDITIONS 2SB631 2SB631K MIN -100 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -120 -100 V -120 -5 -0.4 -1.2 -1 -1 60 20 110 30 MHz pF 320 V V V μA μA V(BR)CBO Collector-base breakdown voltage V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance Switching times tf toff tstg Fall time Turn-off time Storage time IC=-500mA ; VCE=-12V IB1=-IB2=-50mA 0.08 0.10 0.60 μs μs μs hFE-1 Classifications D 60-120 E 100-200 F 160-320 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB631 2SB631K Fig.2 Outline dimensions 3 JMnic Product Specification Silicon PNP Power Transistors 2SB631 2SB631K 4