2SB632

JMnic Product Specification Silicon PNP Power Transistors 2SB632 2SB632K DESCRIPTION ・With TO-126 package ・Complement to type 2SD612/612K ・High collector dissipation ・Wide ASO(Safe Operating Area) APPLICATIONS ・25V/35V, 2A low-frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ・ Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SB632 VCBO Collector-base voltage 2SB632K 2SB632 VCEO Collector-emitter voltage 2SB632K VEBO IC ICM Emitter-base voltage Collector current (DC) Collector current-Peak Ta=25℃ PD Total power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 10 150 -55~150 ℃ ℃ Open collector Open base -35 -5 -2 -3 1 W V A A Open emitter -35 -25 V CONDITIONS VALUE -25 V UNIT JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SB632 IC=-1mA; RBE=∞ 2SB632K 2SB632 IC=-10μA ;IE=0 2SB632K IE=-10μA ;IC=0 IC=-1.5A ;IB=-0.15A IC=-1.5A ;IB=-0.15A VCB=-20V; IE=0 VEB=-4V; IC=0 IC=-0.5A ; VCE=-2V IC=-1.5A ; VCE=-2V IC=-50mA ; VCE=-10V f=1MHz ; VCB=-10V CONDITIONS 2SB632 2SB632K MIN -25 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -35 -25 V -35 -5 -0.4 -1.1 -0.9 -1.5 -1 -1 60 30 100 45 MHz pF 320 V V V μA μA V(BR)CBO Collector-base breakdown voltage V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance Switching times ton tf tstg Turn-on time Fall time Storage time IC=500mA ; VCE=12V IB1=-IB2=50mA 0.06 0.08 0.40 μs μs μs hFE-1 Classifications D 60-120 E 100-200 F 160-320 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB632 2SB632K Fig.2 Outline dimensions 3 JMnic Product Specification Silicon PNP Power Transistors 2SB632 2SB632K 4