2SB656

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SB656 DESCRIPTION ・With TO-3 package ・High power dissipation APPLICATIONS ・For use in power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -160 -160 -5 -12 -4 125 150 -55~150 UNIT V V V A A W ℃ ℃ Product Specification www.jmnic.com Silicon PNP Power Transistors 2SB656 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -160 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -160 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-10A; IB=-1A -3.0 V ICBO Collector cut-off current VCB=-160V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE DC current gain IC=-1A ; VCE=-5V 60 200 fT Transition frequency IC=-1A ; VCE=-10V 20 MHz hFE Classifications B 60-120 C 100-200 2 Product Specification www.jmnic.com Silicon PNP Power Transistors PACKAGE OUTLINE 2SB656 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3