2SB668

JMnic Product Specification Silicon PNP Power Transistors 2SB668 DESCRIPTION ・With TO-220C package ・High DC current gain ・DARLINGTON APPLICATIONS ・For use in power amplifier and switching applications PINNING PIN 1 2 3 Base Collector; connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -5 -3 -5 25 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB668 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA, IB=0 -100 V V(BR)CBO Collector-base breakdown voltage IC=-1mA, IE=0 -100 V V(BR)EBO Emitter-base breakdown voltage IE=-2mA, IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-2A ,IB=-8mA -2.0 V VBEsat Base-emitter saturation voltage IC=-2A ,IB=-8mA -2.5 V ICBO Collector cut-off current VCB=-120V, IE=0 -100 μA ICEO Collector cut-off current VCE=-100V, IB=0 -500 μA IEBO Emitter cut-off current VEB=-5V, IC=0 -2 mA hFE DC current gain IC=-1A ; VCE=-3V 2000 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB668 Fig.2 Outline dimensions 3