2SB688

JMnic Product Specification Silicon PNP Power Transistors 2SB688 DESCRIPTION ・With TO-3P(I) package ・Complement to type 2SD718 APPLICATIONS ・Power amplifier applications ・Recommend for 45~50W audio frequency amplifier output stage PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -5 -8 -0.8 80 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE fT Cob PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA ,IB=0 IC=-5A; IB=-0.5A IC=-5A ; VCE=-5V VCB=-120V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-1A ; VCE=-5V IE=0 ; VCB=-10V ;f=1MHz 55 10 280 MIN -120 2SB688 TYP. MAX UNIT V -2.5 -1.5 -10 -10 160 V V μA μA MHz pF hFE Classifications R 55-110 O 80-160 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB688 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 JMnic Product Specification Silicon PNP Power Transistors 2SB688 4