2SB744A

JMnic Product Specification Silicon PNP Power Transistors 2SB744 2SB744A DESCRIPTION ・With TO-126 package ・Complement to type 2SD794/794A ・Excellent hFE linearity APPLICATIONS ・For audio frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO PARAMETER Collector-base voltage 2SB744 VCEO Collector-emitter voltage 2SB744A VEBO IC ICM IB Emitter-base voltage Collector current (DC) Collector current-Peak Base current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 10 150 -55~150 ℃ ℃ Open collector Open base -60 -5 -3 -5 -0.6 1 W V A A A CONDITIONS Open emitter VALUE -70 -45 V UNIT V JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SB744 V(BR)CEO Collector-emitter breakdown voltage 2SB744A VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance IC=-1.5A ;IB=-0.15A IC=-1.5A ;IB=-0.15A VCB=-45V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-0.5A ; VCE=-5V IC=-0.1A ; VCE=-5V f=1MHz ; VCB=-10V;IE=0 IC=-10mA; IB=0 CONDITIONS 2SB744 2SB744A MIN -45 TYP. MAX UNIT V -60 -0.5 -0.8 -2.0 -2.0 -1 -1 30 60 120 100 45 60 320 MHz pF V V μA μA hFE-2 Classifications R 60-120 O 100-200 Y 160-320 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB744 2SB744A Fig.2 Outline dimensions 3 JMnic Product Specification Silicon PNP Power Transistors 2SB744 2SB744A 4