2SB755

JMnic Product Specification Silicon PNP Power Transistors 2SB755 DESCRIPTION ・With MT-200 package ・Complement to type 2SD845 ・High transition frequency ・High breakdown voltage :VCEO=-150V(min) APPLICATIONS ・For power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION ・ Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collectorl power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -5 -12 -1.2 120 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-0.1A; IB=0 IE=-10mA; IC=0 IC=-5 A;IB=-0.5 A IC=-5A ; VCE=-5V VCB=-150V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-1A ; VCE=-10V IE=0; VCB=-10V;f=1MHz 55 20 450 MIN -150 -5 TYP. 2SB755 MAX UNIT V V -2.0 -1.5 -50 -50 160 V V μA μA MHz pF hFE classifications R 55-110 O 80-160 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB755 Fig.2 Outline dimensions 3