2SB761A

JMnic Product Specification Silicon PNP Power Transistors 2SB761 2SB761A DESCRIPTION ・With TO-220C package ・Complement to type 2SD856/856A ・Low collector saturation voltage APPLICATIONS ・For audio frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ・ Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER 2SB761 VCBO Collector-base voltage 2SB761A 2SB761 VCEO Collector-emitter voltage 2SB761A VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collectorl power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -80 -5 -3 -5 35 150 -55~150 V A A W ℃ ℃ Open emitter -80 -60 V CONDITIONS VALUE -60 V UNIT JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SB761 IC=-30mA; IB=0 2SB761A VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage 2SB761 2SB761A ICEO IEBO hFE-1 hFE-2 Collector cut-off current Emitter cut-off current DC current gain DC current gain IC=-3 A;IB=-0.375 A IC=-3A ; VCE=-4V VCE=-60V; VBE=0 CONDITIONS 2SB761 2SB761A MIN -60 TYP. MAX UNIT VCEO Collector-emitter breakdown voltage V -80 -1.2 -1.8 V V ICES Collector cut-off current -200 VCE=-80V; VBE=0 VCE=-60V; IB=0 VEB=-5V; IC=0 IC=-1A ; VCE=-4V IC=-3A ; VCE=-4V 40 10 -300 -1 250 μA μA mA Switching times ton toff Turn-on time IC=-1A ; IB1=-IB2=-0.1 A Turn-off time 2.0 μs 0.5 μs hFE-1 classifications R 40-90 Q 70-150 P 120-250 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB761 2SB761A Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3