2SB816

JMnic Product Specification Silicon PNP Power Transistors 2SB816 DESCRIPTION ・With TO-3PN package ・Complement to type 2SD1046 ・Wide area of safe operation APPLICATIONS ・For LF Power Amplifier, 50W Output Large Power Switching Applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -150 -120 -6 -8 -12 80 150 -40~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ;RBE=∞ IC=-5mA ;IE=0 IE=-5mA ;IC=0 IC=-5A; IB=-0.5A IC=-1A;VCE=-5V VCB=-80V; IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-5V IC=-5A ; VCE=-5V IC=-1A ; VCE=-5V f=1MHz;VCB=-10V 60 20 15 220 MIN -120 -150 -6 -1.0 TYP. 2SB816 MAX UNIT V V V -2.0 -1.5 -0.1 -0.1 200 V V mA mA MHz pF Switching times ton tstg tf Turn-on time Storage time Fall time IC=-1.0A ;IB1=-IB2=-0.1A VCC=20V;RL=20Ω 0.22 0.93 0.37 μs μs μs hFE-1 Classifications D 60-120 E 100-200 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB816 Fig.2 outline dimensions 3 JMnic Product Specification Silicon PNP Power Transistors 2SB816 4