2SB817

JMnic Product Specification Silicon PNP Power Transistors 2SB817 DESCRIPTION ・With TO-3PN package ・Complement to type 2SD1047 APPLICATIONS ・140V/12A AF 60W output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -160 -140 -6 -12 -15 100 150 -40~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ;IB=0 IC=-5mA ;IE=0 IE=-5mA ;IC=0 IC=-5A ;IB=-0.5A IC=-1A;VCE=-5V VCB=-80V; IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-5V IC=-6A ; VCE=-5V IC=-1A ; VCE=-5V IE=0;f=1MHz;VCB=10V 60 20 15 300 MIN -140 -160 -6 -1.1 TYP. 2SB817 MAX UNIT V V V V -1.5 -0.1 -0.1 200 V mA mA MHz pF Switching times ton tstg tf Turn-on time Storage time Fall time IC=-1.0A IB1=-IB2=-0.1A 0.25 1.61 0.53 μs μs μs hFE-1 Classifications D 60-120 E 100-200 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB817 Fig.2 outline dimensions 3 JMnic Product Specification Silicon PNP Power Transistors 2SB817 4