2SB826

JMnic Product Specification Silicon PNP Power Transistors 2SB826 DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Complement to type 2SD1062 ・Wide area of safe operation APPLICATIONS ・Relay drivers, ・High-speed inverters, converters ・General high-current switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -60 -50 -6 -12 -15 40 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-1mA ;RBE=∞ IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-6A;IB=-0.3A VCB=-40V;IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-5A ; VCE=-2V IC=-1A ; VCE=-5V 70 30 10 MIN -50 -60 -6 TYP. 2SB826 MAX UNIT V V V -0.5 -0.1 -0.1 280 V mA mA MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=5.0A ;IB1=- IB2=0.5A 0.2 0.1 0.4 μs μs μs hFE-1 classifications Q 70-140 R 100-200 S 140-280 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB826 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 JMnic Product Specification Silicon PNP Power Transistors 2SB826 4