2SB828

JMnic Product Specification Silicon PNP Power Transistors 2SB828 DESCRIPTION ・With TO-3PN package ・Complement to type 2SD1064 ・Low collector saturation voltage ・Wide area of safe operation APPLICATIONS ・Relay drivers,high-speed inverters, converters,and other general highcurrent switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -60 -50 -6 -12 -17 80 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-1mA ;RBE=∞ IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-6A ;IB=-0.3A VCB=-40V IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-5A ; VCE=-2V IC=-1A ; VCE=-5V 70 30 10 MIN -60 -50 -6 TYP. 2SB828 MAX UNIT V V V -0.5 -0.1 -0.1 280 V mA mA MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=-5.0A; IB1=-IB2=-0.5A RL=4Ω 0.2 0.1 0.4 μs μs μs hFE-1 Classifications Q 70-140 R 100-200 S 140-280 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB828 Fig.2 outline dimensions 3 JMnic Product Specification Silicon PNP Power Transistors 2SB828 4