2SB829

JMnic Product Specification Silicon PNP Power Transistors 2SB829 DESCRIPTION ・With TO-3PN package ・Complement to type 2SD1065 ・Wide area of safe operation ・Low collector saturation voltage : VCE(sat) =–0.5V max. APPLICATIONS ・Relay drivers, ・High-speed inverters,converters ・General high-current switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -60 -50 -6 -15 -20 90 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification Silicon PNP Power Transistors 2SB829 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-1mA ;RBE=∞ IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-8A ,IB=-0.4A VCB=-40V, IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-8A ; VCE=-2V IC=-1A ; VCE=-5V 70 30 20 MHz MIN -50 -60 -6 -0.26 -0.5 -0.1 -0.1 280 TYP. MAX UNIT V V V V mA mA Switching times ton tstg tf Turn-on time Storage time Fall time IC=-2.0A; IB1=-IB2=-0.2A VCC=20V;RL=10Ω 0.20 0.10 0.50 μs μs μs hFE-1 Classifications Q 70-140 R 100-200 S 140-280 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB829 Fig.2 outline dimensions 3 JMnic Product Specification Silicon PNP Power Transistors 2SB829 4