2SB849

JMnic Product Specification Silicon PNP Power Transistors 2SB849 DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1110 ・Wide area of safe operation APPLICATIONS ・For use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -120 -120 -7 -7 80 150 -55~150 UNIT V V V A W ℃ ℃ JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB849 MAX UNIT VCEO(BR) Collector-emitter breakdown voltage IC=-10mA ;IB=0 -120 V VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A -2.0 V VBEsat Base-emitter saturation voltage IC=-5A ;IB=-0.5A -2.0 V μA μA ICBO Collector cut-off current VCB=-120V; IE=0 -50 IEBO Emitter cut-off current VEB=-6V; IC=0 -50 hFE-1 DC current gain IC=-20mA ; VCE=-5V 20 hFE -2 DC current gain IC=-1A ; VCE=-5V 40 200 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 340 pF fT Transition frequency IC=-0.2A ; VCE=-5V 14 MHz 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB849 Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3