JMnic
Product Specification
Silicon PNP Power Transistor
2SB885
DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC durrent gain ・Low collector saturation voltage ・Complement to type 2SD1195 APPLICATIONS ・For motor drivers,printer hammer drivers,relay drivers,voltage regulator control applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings(Tc=25℃)
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector current-Pulse TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 1.75 150 -55~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE -110 -100 -6 -5 -8 35 W UNIT V V V A A
JMnic
Product Specification
Silicon PNP Power Transistor
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC=-50mA, RBE=∞ MIN TYP.
2SB885
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
-100
V
V(BR)CBO
Collector-base breakdown voltage
IC=-5mA, IE=0
-110
V
VCEsat
Collector-emitter saturation voltage
IC=-2.5A ,IB=-5mA
-1.5
V
VBE sat
Base-emitter saturation voltage
IC=-2.5A ,IB=-5mA
-2.0
V
ICBO
Collector cut-off current
VCB=-80V, IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-3.0
mA
hFE
DC current gain
IC=-2.5A ; VCE=-3V
1500
fT
Transition frequency
VCE=-5V, IC=-2.5A
20
MHz
Switching times μs μs μs
ton
Turn-on time IC=-2A ; VCC=-50V IB1=-IB2=-4mA;RL=25Ω
0.7
tstg
Storage time
1.3
tf
Turn-off time
1.5
2
JMnic
Product Specification
Silicon PNP Power Transistor
PACKAGE OUTLINE
2SB885
Fig.2 Outline dimensions
3
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