JMnic
Product Specification
Silicon PNP Power Transistors
2SB942 2SB942A
DESCRIPTION ・With TO-220Fa package ・High forward current transfer ratio hFE which has satisfactory linearity ・Low collector saturation voltage ・Complement to type 2SD1267/1267A APPLICATIONS ・For low-frequency power amplification
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER 2SB942 VCBO Collector-base voltage 2SB942A 2SB942 VCEO Collector-emitter voltage 2SB942A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 40 150 -55~150 ℃ ℃ Open collector Open base -80 -5 -4 -8 2 W V A A Open emitter -80 -60 V CONDITIONS VALUE -60 V UNIT
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SB942 IC=-30mA ,IB=0 2SB942A IC=-4A, IB=-0.4A IC=-3A ; VCE=-4V VEB=-5V; IC=0 2SB942 2SB942A 2SB942 2SB942A VCE=-30V; IB=0 CONDITIONS
2SB942 2SB942A
MIN -60
TYP.
MAX
UNIT
VCEO
Collector-emitter voltage
V -80 -1.5 -2 -1 V V mA
VCEsat VBE IEBO
Collector-emitter saturation voltage Base-emitter voltage Emitter cut-off current
ICEO
Collector cut-off current
-0.7 VCE=-60V; IB=0 VCE=-60V; VBE=0 -0.4 VCE=-80V; VBE=0 IC=-1A ; VCE=-4V IC=-3A ; VCE=-4V IC=-0.1A; VCE=-10V,f=10MHz 70 15 30 250
mA
ICES
Collector cut-off current
mA
hFE-1 hFE-2 fT
DC current gain DC current gain Transition frequency
MHz
Switching times ton tstg tf Turn-on time Storage time Fall time IC=-4A IB1=-0.4A ,IB2=0.4A 0.2 0.5 0.2 μs μs μs
hFE-1 Classifications Q 70-150 P 120-250
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB942 2SB942A
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SB942 2SB942A
4
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