2SB942A

JMnic Product Specification Silicon PNP Power Transistors 2SB942 2SB942A DESCRIPTION ・With TO-220Fa package ・High forward current transfer ratio hFE which has satisfactory linearity ・Low collector saturation voltage ・Complement to type 2SD1267/1267A APPLICATIONS ・For low-frequency power amplification PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SB942 VCBO Collector-base voltage 2SB942A 2SB942 VCEO Collector-emitter voltage 2SB942A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 40 150 -55~150 ℃ ℃ Open collector Open base -80 -5 -4 -8 2 W V A A Open emitter -80 -60 V CONDITIONS VALUE -60 V UNIT JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SB942 IC=-30mA ,IB=0 2SB942A IC=-4A, IB=-0.4A IC=-3A ; VCE=-4V VEB=-5V; IC=0 2SB942 2SB942A 2SB942 2SB942A VCE=-30V; IB=0 CONDITIONS 2SB942 2SB942A MIN -60 TYP. MAX UNIT VCEO Collector-emitter voltage V -80 -1.5 -2 -1 V V mA VCEsat VBE IEBO Collector-emitter saturation voltage Base-emitter voltage Emitter cut-off current ICEO Collector cut-off current -0.7 VCE=-60V; IB=0 VCE=-60V; VBE=0 -0.4 VCE=-80V; VBE=0 IC=-1A ; VCE=-4V IC=-3A ; VCE=-4V IC=-0.1A; VCE=-10V,f=10MHz 70 15 30 250 mA ICES Collector cut-off current mA hFE-1 hFE-2 fT DC current gain DC current gain Transition frequency MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=-4A IB1=-0.4A ,IB2=0.4A 0.2 0.5 0.2 μs μs μs hFE-1 Classifications Q 70-150 P 120-250 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB942 2SB942A Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3 JMnic Product Specification Silicon PNP Power Transistors 2SB942 2SB942A 4