2SB944

JMnic Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Large collector current IC ・Low collector saturation voltage ・Complement to type 2SD1269 APPLICATIONS ・For power switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SB944 Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 35 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -130 -80 -7 -4 -8 2 W UNIT V V V A A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat IEBO ICBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Emitter cut-off current Collector cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-10mA ,IB=0 IC=-3A, IB=-0.15A IC=-3A, IB=-0.15A VEB=-5V; IC=0 VCB=-100V; IE=0 IC=-0.1A ; VCE=-2V IC=-1A ; VCE=-2V IC=-0.5A; VCE=-10V;f=10MHz 45 90 30 MIN -80 TYP. 2SB944 MAX UNIT V -0.5 -1.5 -50 -10 V V μA μA 260 MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=-1A;IB1=-IB2=-0.1A 0.15 0.8 0.15 μs μs μs hFE-2 Classifications Q 90-180 P 130-260 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB944 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3