2SB947A

JMnic Product Specification Silicon PNP Power Transistors 2SB947 2SB947A DESCRIPTION ・With TO-220Fa package ・High speed switching ・Low collector saturation voltage APPLICATIONS ・For low-voltage switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base ・ Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SB947 VCBO Collector-base voltage 2SB947A 2SB947 VCEO Collector-emitter voltage 2SB947A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 35 150 -55~150 ℃ ℃ Open collector Open base -40 -5 -10 -15 2 W V A A Open emitter -50 -20 V CONDITIONS VALUE -40 V UNIT JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SB947 IC=-10mA; IB=0 2SB947A IC=-7A ;IB=-0.23A IC=-7A ;IB=-0.23A VCB=-40V; IE=0 VCB=-50V; IE=0 VEB=-5V; IC=0 IC=-0.1A ; VCE=-2V IC=-2A ; VCE=-2V IC=-0.5A; VCE=-10V,f=10MHz f=1MHz ; VCB=-10V CONDITIONS 2SB947 2SB947A MIN -20 TYP. MAX UNIT VCEO Collector-emitter voltage V -40 -0.6 -1.5 -50 -50 -50 45 90 150 200 0.1 260 MHz pF μs μs μs V V μA μA μA VCEsat VBEsat Collector-emitter saturation voltage Base-emitter saturation voltage 2SB947 ICBO Collector cut-off current 2SB947A IEBO hFE-1 hFE-2 fT COB ton ts tf Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance Trun-on time Storage time Fall time IC=-2A ;IB1=-IB2=-66mA 0.5 0.1 hFE-2 Classifications Q 90-180 P 130-260 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB947 2SB947A Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3 JMnic Product Specification Silicon PNP Power Transistors 2SB947 2SB947A 4 JMnic Product Specification Silicon PNP Power Transistors 2SB947 2SB947A 5