2SC1027

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1027 DESCRIPTION ・With TO-3 package ・High power dissipation ・Low collector saturation voltage APPLICATIONS ・Switching regulators ・DC-DC convertor ・General purpose power amplifiers PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 250 80 5 6 50 150 -55~150 UNIT V V V A W ℃ ℃ Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC1027 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 80 V V(BR)CBO V(BR)EBO Collector-base breakdown voltage IC=1mA ;IE=0 IE=1mA ;IC=0 250 V Emitter-base breakdown voltage 5 V VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 1.0 V VBEsat Base-emitter saturation voltage IC=5A; IB=0.5A 1.5 V ICBO Collector cut-off current VCB=250V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=5A ; VCE=2V 10 2 Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1027 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3