2SC1051

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1051 DESCRIPTION ・With TO-3 package ・Wide area of safe operation APPLICATIONS ・For low frequency power amplifier and large power switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 150 100 5 7 60 150 -55~150 UNIT V V V A W ℃ ℃ Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC1051 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 100 V V(BR)CBO V(BR)EBO Collector-base breakdown voltage IC=1mA ;IE=0 IE=1mA ;IC=0 150 V Emitter-base breakdown voltage 5 V VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 2.0 V VBE Base-emitter on voltage IC=1A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=150V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE fT DC current gain IC=1A ; VCE=5V IC=0.5A ; VCE=5V 40 320 Transition frequency 8 MHz hFE Classifications C 40-80 D 60-120 E 100-200 F 160-320 2 Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1051 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3