2SC1080

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1079 2SC1080 DESCRIPTION ・With TO-3 package ・Complement to type 2SA679/680 ・High power dissipation APPLICATIONS ・For audio power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2SC1079 VCBO Collector-base voltage 2SC1080 2SC1079 VCEO Collector-emitter voltage 2SC1080 VEBO IC IE PC Tj Tstg Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 100 5 12 -12 100 150 -65~150 V A A W ℃ ℃ Open emitter 100 120 V CONDITIONS VALUE 120 V UNIT Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SC1079 V(BR)CEO Collector-emitter breakdown voltage 2SC1080 V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency IE=10mA ;IC=0 IC=10A; IB=1A IC=10A ; VCE=5V VCB=50V; IE=0 VEB=5V; IC=0 IC=2A ; VCE=5V IC=7A ; VCE=5V IC=2A ; VCE=5V IC=0.1A ;IB=0 CONDITIONS 2SC1079 2SC1080 MIN 120 TYP. MAX UNIT V 100 5 3.0 2.5 0.1 0.1 40 15 4 MHz 140 V V V mA mA hFE-1 Classifications R 40-80 Y 70-140 2 Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1079 2SC1080 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3