2SC1096

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1096 DESCRIPTION ・With TO-202 package ・Low breakdown voltage ・High current ・High fT APPLICATIONS ・For audio frequency power amplifier and low speed switching applications ・Suitable for output stages of 3 to 5 watts car radio sets and car stereo PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-202) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25℃ Collector power dissipation TC=25℃ Junction temperature Storage temperature 10 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 40 30 5 3 6 0.6 1.2 W UNIT V V V A A A JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBEsat VCEO ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=3A ;IB=0.3A IC=3A ;IB=0.3A IC=10mA; IB=0 VCB=30V;IE=0 VEB=3V; IC=0 IC=20mA ; VCE=5V IC=1.0A ; VCE=5V IE=0; VCB=10V;f=1.0MHz IC=0.1A ; VCE=5V 20 40 55 65 30 MIN TYP. 2SC1096 MAX 2.0 2.0 UNIT V V V 1.0 1.0 μA μA 250 pF MHz hFE-1 classifications N 40-60 M 50-100 L 80-160 K 120-250 JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1096 Fig.2 outline dimensions JMnic