2SC1098

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1098 2SC1098A DESCRIPTION ・With TO-202 package ・High Voltage ・High transition frequency APPLICATIONS ・Audio frequency power amplifier ・Low speed switching ・Suitable for output stages of 5~17W small stereo sets PINNING(see Fig.2) PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-202) and symbol Emitter DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO PARAMETER Collector-base voltage 2SC1098 VCEO Collector-emitter voltage 2SC1098A VEBO IC ICM IB Emitter-base voltage Collector current Collector current-peak Base current Ta=25℃ PT Total power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 10 150 -55~150 ℃ ℃ Open collector Open base 60 5 3 5 0.6 1.2 W V A A A CONDITIONS Open emitter VALUE 70 45 V UNIT V Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBEsat PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage 2SC1098 V(BR)CEO Collector-emitter breakdown voltage 2SC1098A hFE-1 hFE-2 ICBO IEBO COB fT DC current gain DC current gain Collector cut-off current Emitter cut-off current Output capacitance Transition frequency IC=20mA ; VCE=5V IC=0.5A ; VCE=5V VCB=45V ;IE=0 VEB=3V; IC=0 IE=0; VCB=10V;f=1MHz IC=0.1A ; VCE=5V IC=10mA; IB=0 CONDITIONS IC=1.5A; IB=0.15 A IC=1.5A; IB=0.15 A 2SC1098 2SC1098A MIN TYP. MAX 2.0 2.0 UNIT V V 45 V 60 20 40 250 1.0 1.0 40 60 μA μA pF MHz hFE-2 Classifications N 40-60 M 50-100 L 80-160 K 120-250 2 Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1098 2SC1098A Fig.2 outline dimensions 3