2SC1162

JMnic Product Specification Silicon NPN Power Transistors 2SC1162 DESCRIPTION ・With TO-126 package ・Complement to type 2SA715 APPLICATIONS ・For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ・ Absolute Maximun Ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 10 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 35 35 5 2.5 3 0.75 W UNIT V V V A A JMnic Product Specification Silicon NPN Power Transistors 2SC1162 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA IB=0 IC=1mA ;IE=0 IE=1mA; IC=0 IC=2.0A; IB=0.2A(Pulse test) IC=1.5A ; VCE=2V(Pulse test) VCB=35V; IE=0 VEB=3V; IC=0 IC=0.5A ; VCE=2V IC=1.5A ; VCE=2V(Pulse test) IC=0.2A ; VCE=2V(Pulse test) 60 20 180 MHz MIN 35 35 5 1.0 1.5 20 1 320 TYP. MAX UNIT V V V V V μA μA hFE-1 Classifications B 60-120 C 100-200 D 160-320 2 JMnic Product Specification Silicon NPN Power Transistors 2SC1162 PACKAGE OUTLINE Fig.2 Outline dimensions 3 JMnic Product Specification Silicon NPN Power Transistors 2SC1162 4