2SC1170

JMnic Product Specification Silicon NPN Power Transistors 2SC1170 DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS ・Designed for use in large screen color deflection circuits PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1200 500 6 3.5 1.0 50 150 -55~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 2.5 UNIT ℃/W JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC1170 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 500 V VCEsat VBEsat Collector-emitter saturation voltage IC=2.5A; IB=0.6A IC=2.5A; IB=0.6A 10 V Base-emitter saturation voltage 1.2 V ICES Collector cut-off current VCE=1200V; VBE=0 1.0 mA μA μA ICBO Collector cut-off current VCB=800V; IE=0 20 IEBO Emitter cut-off current VEB=5V; IC=0 20 hFE-1 DC current gain IC=0.5A ; VCE=10V 10 hFE-2 fT DC current gain IC=2A ; VCE=10V IC=0.5A ; VCE=10V 5 Transition frequency 4 MHz 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1170 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3