2SC1173

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1173 DESCRIPTION ・With TO-220 package ・Complement to type 2SA473 ・Collector current :IC=3A ・Collector dissipation:PC=10W@TC=25℃ APPLICATIONS ・Low frequency power amplifier ・Power regulator PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 30 30 5 3 10 150 -55~150 UNIT V V V A W ℃ ℃ JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO VCBO VEBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA ;IB=0 IC=0.5mA ;IE=0 IE=1mA ;IC=0 IC=2A IB=0.2A IC=0.5A ; VCE=2V VCB=20V;IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=2V IC=2.5A ; VCE=2V IE=0; VCB=10V;f=1MHz IC=0.5A ; VCE=2V 70 25 35 100 MIN 30 30 5 TYP. 2SC1173 MAX UNIT V V V 0.8 1.0 1.0 1.0 240 V V μA μA pF MHz hFE-1 classifications O 70-140 Y 120-240 JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1173 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) JMnic