2SC1827

JMnic Product Specification Silicon NPN Power Transistors 2SC1827 DESCRIPTION ・With TO-220 package ・Complement to type 2SA769 ・Collector current :IC=4A ・Collector dissipation :PC=30W@TC=25℃ APPLICATIONS ・For use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 80 80 5 4 30 150 -55~150 UNIT V V V A W ℃ ℃ JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC1827 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 80 V V(BR)CBO Collector-base breakdown voltage IC=0.1mA ;IE=0 80 V V(BR)EBO Emitter-base breakdown voltage IE=0.1mA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A 1.0 V VBEsat Base-emitter saturation voltage IC=3A ;IB=0.3A 1.5 V ICBO Collector cut-off current VCB=80V;IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE DC current gain IC=1A ; VCE=4V 60 240 fT Transition frequency IC=0.5A ; VCE=2V 8 MHz 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1827 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3