2SC1913

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1913 2SC1913A DESCRIPTION ・With TO-220 package ・Complement to type 2SA913/913A ・Large collector power dissipation ・High VCEO APPLICATIONS ・Audio frequency high power driver PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO PARAMETER 2SC1913 Collector-base voltage 2SC1913A 2SC1913 VCEO VEBO IC ICM PC Tj Tstg Collector-emitter voltage 2SC1913A Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 180 5 1 1.5 15 150 -55~150 V A A W ℃ ℃ Open emitter 180 150 V CONDITIONS VALUE 150 V UNIT JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SC1913 IC=0.1mA ,IB=0 2SC1913A IE=10μA ,IC=0 CONDITIONS 2SC1913 2SC1913A MIN 150 TYP. MAX UNIT VCEO Base-emitter breakdown voltage V 180 5 1.0 V VEBO Emitter-base breakdown voltage 2SC1913 VCEsat Collector-emitter saturation voltage IC=0.3A; IB=30mA 2SC1913A IC=0.3A; IB=30mA VCB=120V; IE=0 VEB=4V; IC=0 IC=150mA ; VCE=10V IC=500mA ; VCE=5V IE=0 ; VCB=100V;f=1MHz IC=50mA ; VCE=10V 120 65 50 15 1.5 1.5 1 1 330 V VBEsat ICBO IEBO hFE-1 hFE-2 COB fT Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency V μA μA pF MHz hFE-1 Classifications P 65-110 Q 90-155 R 130-220 S 185-330 JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1913 2SC1913A Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) JMnic