2SC2166

Product Specification Silicon NPN Power Transistor 2SC2166 DESCRIPTION ・High Power Gain: Gpe≥ 13.8dB @f= 27MHz, PO= 6W; VCC= 12V ・High Reliability APPLICATIONS ・Designed for 3 to 4 watts output power amplifiers in HF band mobile radio applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCER VEBO IC PARAMETER Collector-Base Voltage Collector-Emitter Voltage RBE= 10Ω Emitter-Base Voltage Collector Current Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃ Tj Tstg Junction Temperature Storage Temperature Range 1.5 150 -55~150 ℃ ℃ VALUE 45 45 4 4 12.5 W UNIT V V V A THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-c PARAMETER Thermal Resistance,Junction to Ambient Thermal Resistance,Junction to Case MAX 83 10 UNIT ℃/W ℃/W Website：www.jmnic.com Product Specification Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2166 TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA, IE= 0 45 V V(BR)CER Collector-Emitter Breakdown Voltage IC= 10mA; RBE= 10Ω 45 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA, IC= 0 4 V ICBO Collector Cutoff Current VCB= 30V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 0.1 mA hFE DC Current Gain IC= 0.1A; VCE= 10V 35 180 PO Output Power VCC= 12V; Pin= 0.25W; f= 27MHz 6 7.5 W ηC Collector Efficiency 55 60 % Website：www.jmnic.com