2SC2258

JMnic Product Specification Silicon NPN Power Transistors 2SC2258 DESCRIPTION ・With TO-126 package ・High transition frequency fT ・High collector-emitter voltage VCEO APPLICATIONS ・For high breakdown voltage general amplification ・For video output amplification PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector- emitter voltage Emitter-base voltage Collector current Collector current-peak CONDITIONS Open emitter Open base Open collector VALUE 250 250 7 0.1 0.15 1.2*1 PC Collector power dissipation TC=25℃ 4* Tj Tstg Junction temperature Storage temperature 2 UNIT V V V A A W 150 -55～+150 ℃ ℃ Note :*1: Without heat sink *2: With a 100 × 100 × 2 mm A1 heat sink JMnic Product Specification Silicon NPN Power Transistors 2SC2258 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL ICER V(BR)EBO VCEsat VBE hFE-1 hFE-2 COB fT PARAMETER Collector cutoff current Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage DC current gain DC current gain Output capacitance Transition frequency CONDITIONS VCE=250V;RBE=100kΩ IE=0.1mA ;IC=0 IC=50mA ;IB=5m A IC=40mA ; VCE=20V IC=40mA ; VCE=20V IC=5mA ; VCE=50V IE=0; VCB=50V;f=1MHz IE=-10mA ; VCE=10V,f=200MHz 40 30 3 100 4.5 pF MHz 7 1.2 1.2 MIN TYP. MAX 100 UNIT μA V V V 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2258 Fig.2 Outline dimensions 3 JMnic Product Specification Silicon NPN Power Transistors 2SC2258 4