2SC2258A

JMnic Product Specification Silicon NPN Power Transistors 2SC2258A DESCRIPTION ・With TO-126 package ・High transition frequency fT ・High collector-emitter voltage VCEO APPLICATIONS ・High voltage general amplifier ・TV video output amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector- emitter voltage Emitter-base voltage Collector current Collector current-peak CONDITIONS Open emitter Open base Open collector VALUE 300 300 7 0.1 0.15 1.2*1 PC Collector power dissipation TC=25℃ 4* Tj Tstg Junction temperature Storage temperature 2 UNIT V V V A A W 150 -55～+150 ℃ ℃ Note :*1: Without heat sink *2: With a 100 × 100 × 2 mm A1 heat sink JMnic Product Specification Silicon NPN Power Transistors 2SC2258A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE=250V;RBE=100kΩ MIN TYP. MAX UNIT μA ICER Collector cutoff current 100 V(BR)EBO VCEsat Emitter-base breakdown voltage IE=0.1mA ;IC=0 IC=50mA ;IB=5m A 7 V Collector-emitter saturation voltage 1.2 V VBE Base-emitter voltage IC=40mA ; VCE=20V 1.2 V hFE-1 DC current gain IC=40mA ; VCE=20V 40 hFE-2 DC current gain IC=5mA ; VCE=50V 30 COB Output capacitance IE=0; VCB=50V;f=1MHz 3 4.5 pF fT Transition frequency IE=-10mA ; VCE=10V 100 MHz 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2258A Fig.2 Outline dimensions 3