JMnic
Product Specification
Silicon NPN Power Transistors
2SC2275 2SC2275A
DESCRIPTION ・With TO-220 package ・Complement to type 2SA985/985A ・High breakdown voltage APPLICATIONS ・For low frequency and high frequency power amplifer applicatons
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER 2SC2275 VCBO Collector-base voltage 2SC2275A 2SC2275 VCEO Collector-emitter voltage 2SC2275A VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 150 5 1.5 3.0 0.3 25 150 -55~150 V A A A W ℃ ℃ Open emitter 150 120 V CONDITIONS VALUE 120 V UNIT
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS
2SC2275 2SC2275A
MIN
TYP.
MAX
UNIT
2SC2275 V(BR)CEO Collector-emitter breakdown voltage 2SC2275A IC=25mA ,IB=0
120 V 150
VCEsat
Collector-emitter saturation voltage
IC=1A; IB=0.1A
2.0
V
VBEsat
Base-emitter saturation voltage
IC=1A; IB=0.1A
1.5
V
ICBO
Collector cut-off current
VCB=120V; IE=0
1.0
μA
IEBO
Emitter cut-off current
VEB=3V; IC=0
1.0
μA
hFE-1
DC current gain
IC=5mA ; VCE=5V
35
hFE-2
DC current gain
IC=0.3A ; VCE=5V
60
150
320
COB
Output capacitance
IE=0 ; VCB=10V,f=1MHz
19
pF
fT
Transition frequency
IC=0.2A ; VCE=5V
200
MHz
hFE-2 Classifications R 60-120 Q 100-200 P 160-320
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2275 2SC2275A
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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