2SC2334

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC2334 DESCRIPTION ・With TO-220 package ・Complement to type 2SA1010 ・Low collector saturation voltage ・Fast switching speed APPLICATIONS ・Switching regulators ・DC/DC converters ・High frequency power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25℃ PT Total power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 40 150 -55~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE 150 100 7 7 15 3.5 1.5 W UNIT V V V A A A JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEX IEBO hFE-1 hFE-2 hFE-3 PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=5.0A ,IB=0.5A,L=1mH IC=5A; IB=0.5A IC=5A; IB=0.5A VCB=100V; IE=0 VCE=100V; VBE(off)=-1.5V Ta=125℃ VEB=5V; IC=0 IC=0.5A ; VCE=5V IC=3A ; VCE=5V IC=5A ; VCE=5V 40 40 20 MIN 100 TYP. 2SC2334 MAX UNIT V 0.6 1.5 10 10 1.0 10 V V μA μA mA μA 200 Switching times resistive load ton ts tf Turn-on time Storage time Fall time IC=5.0A IB1=-IB2=0.5A RL=10Ω;VCC≈50V 0.5 1.5 0.5 μs μs μs hFE-2 Classifications M 40-80 L 60-120 K 100-200 JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2334 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) JMnic Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2334 JMnic