2SC2344

JMnic Product Specification Silicon NPN Power Transistors 2SC2344 DESCRIPTION ・With TO-220 package ・Complement to type 2SA1011 APPLICATIONS ・High voltage switching ・Audio frequency power amplifier; ・100W output predriver applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 180 160 6 1.5 3.0 25 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE fT Cob PARAMETER Base-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=10mA ,RBE=∞ IC=1mA; IE=0 IE=1mA; IC=0 IC=0.5A; IB=50mA IC=10mA ; VCE=5V VCB=120V; IE=0 VEB=4V; IC=0 IC=0.3A ; VCE=5V IC=50mA ; VCE=10V f=1MHz ; VCB=10V 60 100 23 MIN 160 180 6 0.3 1.5 TYP. 2SC2344 MAX UNIT V V V V V 10 10 200 μA μA MHz pF Switching times resistive load ton ts tf Turn-on time Storage time Fall time IC=0.5A IB1=- IB2=50mA 0.15 0.81 0.48 μs μs μs hFE Classifications D 60-120 E 100-200 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2344 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 JMnic Product Specification Silicon NPN Power Transistors 2SC2344 4 JMnic Product Specification Silicon NPN Power Transistors 2SC2344 5