2SC2365

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC2365 DESCRIPTION ・With TO-3 package ・High breakdown voltage APPLICATIONS ・For use in switch-mode CTV supply systems PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 600 500 6 6 8 50 150 -55~150 UNIT V V V A A W ℃ ℃ Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2365 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 500 V V(BR)EBO VCEsat Emitter-base breakdown voltage IE=1mA ;IC=0 IC=4A; IB=1.25A 6 V Collector-emitter saturation voltage 3.0 V VBEsat Base-emitter saturation voltage IC=4A; IB=1.25A 1.6 V ICBO Collector cut-off current VCB=600V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=3A ; VCE=4V 12 fT Transition frequency IC=0.5A ; VCE=10V 10 MHz 2 Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2365 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3