2SC2578

Product Specification www.jmnic.com Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Complementary to 2SA1104 ・High Power Dissipation ・High Current Capability APPLICATIONS ・Audio power amplifier ・DC TO DC Converter PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC2578 Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 140 100 6 7 70 150 -55~150 UNIT V V V A W ℃ ℃ JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC2578 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=5mA; IE=0 IC=10mA ;RBE=∞ IC=0 ;IE=5mA 140 V V(BR)CEO V(BR)EBO Collector-emitter breakdown voltage 100 V Emitter-base breakdown voltage 6 V ICBO Collector cut-off current VCB=100V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=4V; IC=0 0.1 mA hFE1 DC current gain IC=1A ; VCE=5V 55 160 hFE2 DC current gain IC=3A ; VCE=5V 50 VCE(sat) Collector-emitter saturation voltage IC=3A ; IB=0.3A 2 V JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2578 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) JMnic